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KSC1507R

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KSC1507R

TRANS NPN 300V 200UA TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSC1507R is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a collector-emitter breakdown voltage of 300 V and a maximum collector current of 200 µA. With a transition frequency of 80 MHz and a power dissipation capability of 15 W, it is suitable for power supply circuits and general-purpose amplification. The device operates within a junction temperature range of 150°C and is supplied in a TO-220-3 package. Key parameters include a minimum DC current gain (hFE) of 40 at 10mA, 10V and a collector cutoff current (ICBO) of 100µA. The KSC1507R finds application in areas such as lighting, power management, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 10V
Frequency - Transition80MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)200 µA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max15 W

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