KSC1173OTU
TRANS NPN 30V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC1173OTU is an NPN bipolar junction transistor (BJT) packaged in a TO-220-3 configuration. This through-hole component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 3A. It exhibits a minimum DC current gain (hFE) of 70 at 500mA and 2V. With a transition frequency of 100MHz and a maximum power dissipation of 10W, this device is suitable for applications requiring moderate power handling and signal amplification. The KSC1173OTU is commonly utilized in industrial and consumer electronics for various switching and amplification tasks. Its collector cutoff current is rated at a maximum of 1µA (ICBO), and the Vce saturation voltage is specified at 800mV maximum for an Ic of 2A and Ib of 200mA. The operating junction temperature can reach up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 10 W |
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