KSC1009GTA
TRANS NPN 140V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC1009GTA is an NPN bipolar junction transistor designed for general purpose amplification and switching applications. This device features a maximum collector-emitter breakdown voltage of 140V and a continuous collector current rating of 700mA. With a transition frequency of 50MHz, it offers sufficient bandwidth for many signal processing tasks. The KSC1009GTA has a minimum DC current gain (hFE) of 200 at 50mA and 2V, and a saturation voltage (Vce(sat)) of 700mV at 20mA base current and 200mA collector current. Power dissipation is rated at 800mW. Encased in a TO-92-3 (TO-226AA) package with formed leads, this transistor is suitable for through-hole mounting and is supplied in Tape & Box packaging. Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 800 mW |
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