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KSC1009GBU

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KSC1009GBU

TRANS NPN 140V 0.7A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC1009GBU is a high-voltage NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a 140V collector-emitter breakdown voltage and a maximum collector current of 700mA, this device is suitable for power supply regulation, audio amplifiers, and switching circuits. The KSC1009GBU offers a minimum DC current gain (hFE) of 200 at 50mA and 2V, with a transition frequency of 50MHz. Its TO-92-3 package facilitates through-hole mounting, and the device is rated for a maximum power dissipation of 800mW, with an operating junction temperature up to 150°C. It is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 20mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 50mA, 2V
Frequency - Transition50MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max800 mW

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