KSC1009CYTA
TRANS NPN 140V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC1009CYTA is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 140V collector-emitter breakdown voltage and a continuous collector current capability of up to 700mA. With a transition frequency of 50MHz and a maximum power dissipation of 800mW, it is suitable for use in industrial controls and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 120 at 50mA and 2V, and a Vce saturation of 700mV at 20mA and 200mA. It is provided in a TO-92-3 (TO-226-3, TO-92-3 Formed Leads) package, supplied on Tape & Box (TB). The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 800 mW |
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