KSC1008RBU
TRANS NPN 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC1008RBU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 700mA. With a transition frequency of 50MHz, it offers efficient signal handling. The device exhibits a minimum DC current gain (hFE) of 40 at 50mA and 2V, and a saturation voltage (Vce(sat)) of 400mV at 50mA and 500mA. The maximum power dissipation is 800mW, and the operating junction temperature reaches 150°C. Supplied in a TO-92-3 package, the KSC1008RBU is suitable for through-hole mounting. This transistor finds utility in various industrial and consumer electronics, including audio amplifiers and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
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