KSC1008OTA
TRANS NPN 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1008OTA is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 700mA. With a transition frequency of 50MHz and a power dissipation of 800mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is specified at a minimum of 70 at 50mA collector current and 2V collector-emitter voltage. Saturation characteristics show a Vce(sat) of 400mV maximum at 50mA base current and 500mA collector current. The transistor is housed in a TO-92-3 package, designed for through-hole mounting. The operating junction temperature range extends to 150°C. This device finds application in consumer electronics and industrial control systems. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |