KSC1008GTA
TRANS NPN 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1008GTA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a 700mA maximum collector current. With a minimum DC current gain (hFE) of 200 at 500mA and 2V, and a transition frequency of 50MHz, it offers robust performance for various circuit designs. The device dissipates a maximum power of 800mW and operates within a junction temperature range of -55°C to 150°C. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, it is supplied in cut tape (CT). The KSC1008GTA is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. Its collector cutoff current is a maximum of 100nA (ICBO).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
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