KSC1008GBU
TRANS NPN 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1008GBU, an NPN bipolar junction transistor, offers a 60V collector-emitter breakdown voltage and 700mA continuous collector current. This through-hole device, packaged in a TO-92-3 (TO-226AA), features a maximum power dissipation of 800mW and a transition frequency of 50MHz. The minimum DC current gain (hFE) is 200 at 50mA and 2V. Typical applications include general-purpose amplification and switching in industrial and consumer electronics. The device exhibits a Vce(sat) of 400mV maximum at 50mA base current and 500mA collector current, with a collector cutoff current (ICBO) of 100nA. It operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
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