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KSB834O

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KSB834O

TRANS PNP 60V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSB834O is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 3A. With a transition frequency of 9MHz and a power dissipation of 1.5W, it offers robust performance characteristics for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 60 at 500mA and 5V, with a saturation voltage (Vce Sat) of 1V at 300mA and 3A. Its collector cutoff current is specified at a maximum of 100µA (ICBO). The KSB834O is housed in a TO-220-3 package, suitable for through-hole mounting. This transistor is commonly utilized in industrial automation, consumer electronics, and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 500mA, 5V
Frequency - Transition9MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.5 W

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