KSB810YTA
TRANS PNP 25V 0.7A TO92SManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB810YTA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 25V and a continuous collector current capability of up to 700mA. With a transition frequency of 160MHz and a minimum DC current gain (hFE) of 120 at 100mA and 1V, it offers robust performance for demanding circuits. The device dissipates a maximum of 350mW and has a saturation voltage (Vce Sat) of 400mV at 70mA and 700mA. Operating at temperatures up to 150°C (TJ), the KSB810YTA is housed in a TO-92S package and supplied in Tape & Box (TB) packaging. It finds application in various electronic systems, including consumer electronics and industrial controls.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 70mA, 700mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92S |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 350 mW |
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