KSB798GTF
TRANS PNP 25V 1A SOT89-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB798GTF is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 25 V and a continuous collector current (Ic) of up to 1 A. With a maximum power dissipation of 2 W and an operating junction temperature of 150°C, it is suitable for demanding environments. The transistor exhibits a transition frequency (fT) of 110 MHz and a DC current gain (hFE) of at least 200 at 100 mA collector current and 1 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 400 mV at 100 mA base current and 1 A collector current. Encased in a SOT-89-3 (TO-243AA) surface-mount package and supplied on tape and reel, the KSB798GTF is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 2 W |
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