KSB772YSTSTU
TRANS PNP 30V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB772YSTSTU is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A. With a DC current gain (hFE) of at least 160 at 1A and 2V, it offers efficient signal control. The transition frequency is rated at 80MHz, suitable for moderate frequency operations. The device dissipates a maximum of 1W and operates at temperatures up to 150°C. It is housed in a TO-126-3 (TO-225AA) package for through-hole mounting. Key parameters include a collector cutoff current of 1µA (ICBO) and a Vce(sat) of 500mV at 200mA collector current and 2A collector current. This transistor finds application in power supplies, audio amplifiers, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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