KSB772YSTSSTU
TRANS PNP 30V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB772YSTSSTU is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 1W. It offers a minimum DC current gain (hFE) of 160 at 1A and 2V, and a transition frequency of 80MHz. The device exhibits a Vce(sat) of 500mV at 200mA/2A and a collector cutoff current (ICBO) of 1µA. Packaged in a TO-126-3 (TO-225AA) form factor and supplied in tubes, the KSB772YSTSSTU is suitable for use in power supply circuits, audio amplifiers, and general-purpose amplification and switching applications across various industrial sectors. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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