KSB772OS
TRANS PNP 30V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's KSB772OS is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a 30V collector-emitter breakdown voltage and a 3A continuous collector current rating, this device is suitable for power handling requirements. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1A and 2V, with a transition frequency of 80MHz. Its maximum power dissipation is 1W, and it operates within a junction temperature range of 150°C. The KSB772OS is provided in a TO-126-3 (TO-225AA) through-hole package, facilitating straightforward PCB mounting. This component finds utility in various industrial and consumer electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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