KSB708RTU
TRANS PNP 80V 7A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB708RTU is a PNP bipolar junction transistor (BJT) designed for robust power switching applications. This component features a maximum collector current (Ic) of 7 A and a collector-emitter breakdown voltage (Vce(max)) of 80 V. With a DC current gain (hFE) of at least 40 at 3 A and 1 V, it offers efficient amplification. The transistor exhibits a Vce(sat) of 500 mV at 500 mA base current and 5 A collector current, indicating low saturation voltage. The power dissipation (Pd) is rated at 1.5 W. The KSB708RTU is housed in a standard TO-220-3 through-hole package, suitable for mounting on printed circuit boards. It finds application in various industrial sectors, including power supplies, motor control, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 3A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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