KSB708OTU
TRANS PNP 80V 7A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB708OTU is a PNP bipolar junction transistor (BJT) designed for high-current switching and amplification applications. This component features a maximum collector-emitter breakdown voltage of 80 V and can handle a continuous collector current of up to 7 A. Its minimum DC current gain (hFE) is specified at 60 when operating at 3 A and 1 V. The transistor exhibits a Vce saturation of 500 mV at 500 mA base current and 5 A collector current, with a maximum collector cutoff current of 10 µA. With a maximum power dissipation of 1.5 W, the KSB708OTU is housed in a standard TO-220-3 package, facilitating through-hole mounting. This device is commonly utilized in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 3A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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