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KSB601YTU

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KSB601YTU

TRANS PNP DARL 100V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSB601YTU is a PNP Darlington bipolar transistor with a 100V collector-emitter breakdown voltage. This component is rated for a continuous collector current of 5A and a maximum power dissipation of 1.5W. It features a high DC current gain (hFE) of 5000 minimum at 3A and 2V. The saturation voltage (Vce Sat) is a maximum of 1.5V at 3mA base current and 3A collector current. The collector cutoff current (ICBO) is 10µA maximum. Packaged in a TO-220-3 configuration suitable for through-hole mounting, this transistor operates at junction temperatures up to 150°C. It is commonly utilized in power supply applications, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

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