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KSB601YTSTU

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KSB601YTSTU

TRANS PNP DARL 100V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB601YTSTU is a PNP Darlington bipolar junction transistor designed for high-gain switching applications. It features a maximum collector-emitter breakdown voltage of 100V and a continuous collector current capability of 5A. With a typical DC current gain (hFE) of 5000 at 3A and 2V, this device offers significant amplification. The transistor's saturation voltage (Vce Sat) is a maximum of 1.5V at 3mA base current and 3A collector current. It is housed in a TO-220-3 package, suitable for through-hole mounting, and operates at junction temperatures up to 150°C. The KSB601YTSTU is commonly utilized in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

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