KSB601OTU
TRANS PNP DARL 100V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB601OTU is a PNP Darlington bipolar junction transistor designed for high current gain applications. Featuring a 100 V collector-emitter breakdown voltage and a maximum continuous collector current of 5 A, this device offers a minimum DC current gain (hFE) of 3000 at 3 A and 2 V. The KSB601OTU exhibits a saturation voltage (Vce Sat) of 1.5 V at 3 mA base current and 3 A collector current, with a maximum collector cutoff current (ICBO) of 10 µA. It is packaged in a TO-220-3 through-hole configuration, allowing for efficient heat dissipation with a maximum power dissipation of 1.5 W. The operating junction temperature range extends to 150°C. This component is commonly utilized in power supply regulation, motor control, and general-purpose amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3000 @ 3A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
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