KSB596YTU
TRANS PNP 80V 4A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number KSB596YTU, is designed for robust performance in demanding applications. This device features a 80V collector-emitter breakdown voltage and a continuous collector current capability of 4A, with a maximum power dissipation of 30W. The KSB596YTU operates at a transition frequency of 3MHz and exhibits a minimum DC current gain (hFE) of 120 at 500mA and 5V. Its specified Vce(sat) is 1.7V at 300mA and 3A. Packaged in a standard TO-220-3 through-hole configuration, this transistor is suitable for high-power switching and amplification circuits. It finds application in power supplies, audio amplifiers, and general-purpose analog circuitry across various industrial sectors. The operating junction temperature range extends up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 70µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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