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KSB596Y

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KSB596Y

TRANS PNP 80V 4A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB596Y is a PNP bipolar junction transistor designed for demanding applications. This through-hole component, packaged in a standard TO-220-3, offers a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. With a power dissipation capability of 30W and a transition frequency of 3MHz, it is suitable for power switching and amplification circuits. The transistor exhibits a minimum DC current gain (hFE) of 120 at 500mA and 5V, with a Vce(sat) of 1.7V at 300mA and 3A. Maximum collector cutoff current (ICBO) is 70µA. Operating temperature range extends to 150°C. This device finds application in power supplies, audio amplifiers, and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.7V @ 300mA, 3A
Current - Collector Cutoff (Max)70µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 5V
Frequency - Transition3MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max30 W

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