KSB596OTU
TRANS PNP 80V 4A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB596OTU is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency (fT) of 3 MHz and a maximum power dissipation of 30 W, it is suitable for demanding environments. The device exhibits a minimum DC current gain (hFE) of 70 at 500 mA and 5 V. Key parameters include a collector cutoff current (Icbo) of 70 µA and a Vce(sat) of 1.7 V at 300 mA and 3 A. The KSB596OTU is supplied in a TO-220-3 package for through-hole mounting and operates at junction temperatures up to 150°C. This transistor is commonly utilized in power supply circuits and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 70µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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