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KSB596O

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KSB596O

TRANS PNP 80V 4A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB596O is a PNP bipolar junction transistor (BJT) designed for robust performance in power applications. This through-hole component, housed in a TO-220-3 package, offers a maximum collector current of 4 A and a collector-emitter breakdown voltage of 80 V. With a maximum power dissipation of 30 W and an operating junction temperature up to 150°C, it is suitable for demanding environments. The transistor exhibits a DC current gain (hFE) of 70 at 500 mA and 5 V, and a transition frequency of 3 MHz. Key parameters include a Vce(sat) of 1.7 V at 300 mA and 3 A, and an ICBO of 70 µA. This device finds application in power supply circuits, audio amplifiers, and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.7V @ 300mA, 3A
Current - Collector Cutoff (Max)70µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Frequency - Transition3MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max30 W

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