KSB564ACYBU
TRANS PNP 25V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB564ACYBU is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component features a 25V collector-emitter breakdown voltage and a continuous collector current rating of 1A. With a minimum DC current gain (hFE) of 120 at 100mA and 1V, and a transition frequency of 110MHz, it offers efficient performance in demanding environments. The device dissipates a maximum power of 800mW and operates within a junction temperature range of 150°C. It is supplied in a standard TO-92-3 package, often utilized in industrial, consumer electronics, and automotive sectors. The collector cutoff current is a maximum of 100nA (ICBO), and the saturation voltage (Vce) is specified at 500mV at 100mA collector current and 1A collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 800 mW |
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