KSB546YTU
TRANS PNP 150V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB546YTU is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a maximum collector current of 2 A and a collector-emitter breakdown voltage of 150 V, this device is well-suited for power switching and amplification circuits. Its transition frequency is 5 MHz, and it can dissipate up to 25 W of power. The KSB546YTU offers a minimum DC current gain (hFE) of 120 at 400 mA and 10 V, with a Vce saturation of 1 V at 50 mA and 500 mA. The component exhibits a maximum collector cutoff current (ICBO) of 50 µA and operates efficiently across a wide temperature range up to 150°C. Packaged in a standard TO-220-3 configuration for through-hole mounting, this transistor is commonly utilized in industrial power supplies, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 400mA, 10V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 25 W |
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