KSB546O
TRANS PNP 150V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB546O is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 150 V. With a transition frequency of 5 MHz and a maximum power dissipation of 25 W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 70 at 400 mA collector current and 10 V Vce. The transistor operates within a junction temperature range of -65°C to 150°C. Packaged in a TO-220-3 through-hole configuration, the KSB546O is commonly utilized in industrial motor control, power supply units, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 400mA, 10V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 25 W |
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