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KSB1366YTU

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KSB1366YTU

TRANS PNP 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB1366YTU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 3A. The DC current gain (hFE) is rated at a minimum of 100 at 500mA collector current and 5V collector-emitter voltage. The transistor exhibits a transition frequency of 9MHz and a maximum power dissipation of 2W. It is packaged in a TO-220F-3 (TO-220 Full Pack) through-hole mounting configuration, suitable for automated assembly processes. The KSB1366YTU is utilized in industrial and consumer electronics for power control and signal amplification stages.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition9MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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