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KSB1366Y

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KSB1366Y

TRANS PNP 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB1366Y is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-220F-3 package. This device offers a maximum collector-emitter breakdown voltage of 60V and a continuous collector current capability of 3A. With a power dissipation rating of 2W and a transition frequency of 9MHz, the KSB1366Y is suitable for applications requiring moderate power switching and amplification. The transistor exhibits a minimum DC current gain (hFE) of 100 at 500mA and 5V, and a Vce saturation of 1V at 200mA and 2A. Typical applications include power supply circuits, general-purpose amplification, and switching in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition9MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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