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KSB1366G

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KSB1366G

TRANS PNP 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSB1366G is a PNP bipolar junction transistor designed for robust performance in power applications. This component features a maximum collector emitter breakdown voltage of 60V and can handle a continuous collector current of up to 3A. It offers a minimum DC current gain (hFE) of 150 at 500mA and 5V, with a saturation voltage (Vce Sat) of 1V at 200mA and 2A. The transition frequency is 9MHz, and it is rated for a maximum power dissipation of 2W. Packaged in a TO-220F-3 (Full Pack) offering through-hole mounting, this transistor is suitable for use in industrial controls, consumer electronics, and power supply circuits. The operating temperature range extends to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Frequency - Transition9MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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