KSB1151YSTSTU
TRANS PNP 60V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB1151YSTSTU is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device offers a maximum collector current of 5 A and a collector-emitter breakdown voltage of 60 V. It features a minimum DC current gain (hFE) of 160 at 2 A and 1 V, with a Vce(sat) of 300 mV at 200 mA and 2 A. The transistor dissipates a maximum power of 1.3 W and operates at junction temperatures up to 150°C. Packaged in a TO-126-3 (TO-225AA) through-hole configuration and supplied in a tube, this component is suitable for use in industrial automation, power control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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