KSB1151YSTSSTU
TRANS PNP 60V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1151YSTSSTU is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a maximum continuous collector current (Ic) of 5A. It offers a power dissipation rating of 1.3W and a minimum DC current gain (hFE) of 160 at 2A and 1V. The transistor exhibits a Vce(sat) of 300mV at 200mA and 2A. With a collector cutoff current (Icbo) of 10µA (max), it is suitable for applications requiring low leakage. The KSB1151YSTSSTU is housed in a TO-126-3 (TO-225AA) package and intended for through-hole mounting. Its operating temperature range extends up to 150°C (TJ). This device is commonly utilized in industrial, automotive, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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