KSB1151YS
TRANS PNP 60V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1151YS is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage of 60 V and a continuous collector current capability of 5 A. Its low saturation voltage, specified at 300 mV at 200 mA base current and 2 A collector current, ensures efficient power transfer. The KSB1151YS exhibits a minimum DC current gain (hFE) of 100 at 2 A collector current and 1 V Vce. With a maximum junction temperature of 150°C and a power dissipation of 1.3 W, it is suitable for use in power supply circuits, voltage regulators, and general-purpose amplification across industrial and consumer electronics sectors. The device is supplied in a TO-126-3 (TO-225AA) through-hole package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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