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KSB1149YSTU

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KSB1149YSTU

TRANS PNP DARL 100V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSB1149YSTU is a PNP Darlington bipolar transistor designed for applications requiring high current gain and switching capability. This component features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 3A. The device exhibits a minimum DC current gain (hFE) of 4000 at 1.5A and 2V, with a saturation voltage (Vce Sat) of 1.2V at 1.5mA and 1.5A. With a maximum power dissipation of 1.3W and an operating junction temperature of 150°C, it is suitable for power control circuits. The KSB1149YSTU is packaged in a TO-126-3 (TO-225AA) through-hole configuration and is supplied in tubes. This transistor is commonly utilized in industrial automation and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1.5A, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.3 W

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