KSB1149YS
TRANS PNP DARL 100V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB1149YS is a PNP Darlington bipolar junction transistor designed for high current amplification. This device features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 3A. With a significant DC current gain (hFE) of 4000 at 1.5A and 2V, the KSB1149YS is suitable for applications requiring substantial current handling and amplification. The saturation voltage (Vce(sat)) is 1.2V maximum at 1.5mA base current and 1.5A collector current. It offers a maximum power dissipation of 1.3W and operates at junction temperatures up to 150°C. The transistor type is PNP Darlington, and it is housed in a TO-126-3 (TO-225AA) through-hole package. The KSB1149YS finds application in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.3 W |
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