KSB1149OSTU
TRANS PNP DARL 100V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1149OSTU PNP Darlington Bipolar Junction Transistor. This device offers a 100V collector-emitter breakdown voltage and a 3A continuous collector current capability. Designed for through-hole mounting in a TO-126-3 (TO-225AA) package, it features a maximum power dissipation of 1.3W and a junction temperature rating of 150°C. Achieving a minimum DC current gain (hFE) of 2000 at 1.5A and 2V, it exhibits a Vce saturation of 1.2V at 1.5mA and 1.5A. The collector cutoff current (ICBO) is specified at 10µA. This component is suitable for applications in power switching and amplification within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.3 W |
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