KSB1149OS
TRANS PNP DARL 100V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSB1149OS is a PNP Darlington bipolar transistor designed for robust switching and amplification applications. This device features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A. With a minimum DC current gain (hFE) of 2000 at 1.5A and 2V, it offers significant current amplification. The transistor exhibits a Vce(sat) of 1.2V at 1.5mA and 1.5A, ensuring efficient operation in power switching circuits. Its maximum power dissipation is rated at 1.3W, and it operates up to a junction temperature of 150°C. Packaged in a TO-126-3 (TO-225AA) case for through-hole mounting, the KSB1149OS is commonly utilized in power supply regulation, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.3 W |
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