KSB1116LTA
TRANS PNP 50V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1116LTA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. It offers a transition frequency of 120MHz and a power dissipation of 750mW. The DC current gain (hFE) is a minimum of 300 at 100mA and 2V. The saturation voltage (Vce Sat) is specified at a maximum of 300mV for a base current of 50mA driving a collector current of 1A. The TO-92-3 package with formed leads supports through-hole mounting and operates at junction temperatures up to 150°C. The device is supplied in Tape & Box packaging. This transistor is commonly utilized in consumer electronics, industrial automation, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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