KSB1116GTA
TRANS PNP 50V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1116GTA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. With a transition frequency of 120MHz and a minimum DC current gain (hFE) of 200 at 100mA and 2V, it offers robust performance characteristics. The KSB1116GTA is packaged in a TO-92-3 (TO-226-3) through-hole package, commonly utilized in consumer electronics and industrial control systems. It has a maximum power dissipation of 750mW and an operating junction temperature up to 150°C. The collector cutoff current (ICBO) is rated at 100nA, and the Vce saturation is a maximum of 300mV at 50mA base current and 1A collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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