KSB1116AGBU
TRANS PNP 60V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi KSB1116AGBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current capability of 1A and a collector-emitter breakdown voltage of 60V. With a transition frequency of 120MHz and a maximum power dissipation of 750mW, it offers robust performance. Key specifications include a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a Vce saturation of 300mV at 50mA and 1A. The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. Applications span industrial control, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 750 mW |
Request a Quote
Clients Also Buy
MJE371G
TRANS PNP 40V 4A TO126
MPSA92ZL1G
TRANS PNP 300V 0.5A TO92
MMBTA06_D87Z
TRANS NPN 80V 0.5A SOT23-3
