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KSB1098OTU

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KSB1098OTU

TRANS PNP DARL 100V 5A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSB1098OTU is a PNP Darlington bipolar junction transistor designed for high current gain applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 5A. Optimized for efficient switching and amplification, it offers a minimum DC current gain (hFE) of 3000 at 3A and 2V. The device exhibits a Vce saturation of 1.5V at 3mA base current and 3A collector current, ensuring low power dissipation during operation. With a maximum power dissipation of 2W and an operating junction temperature of 150°C, the KSB1098OTU is suitable for demanding applications in industrial control, power management, and consumer electronics. The TO-220F-3 package with through-hole mounting facilitates integration into various circuit designs.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce3000 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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