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KSB1097RTU

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KSB1097RTU

TRANS PNP 60V 7A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number KSB1097RTU. This device offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 7A. The KSB1097RTU features a minimum DC current gain (hFE) of 40 at 3A and 1V. It is specified with a maximum power dissipation of 2W and a saturation voltage (Vce(sat)) of 500mV at 500mA and 5A. The component operates at temperatures up to 150°C (TJ) and is housed in a TO-220F-3 package, suitable for through-hole mounting. Applications include power switching and linear amplification in various industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 3A, 1V
Frequency - Transition-
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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