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KSB1022TU

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KSB1022TU

TRANS PNP DARL 60V 7A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSB1022TU is a PNP Darlington bipolar junction transistor designed for power switching applications. This device features a maximum collector current of 7 A and a collector-emitter breakdown voltage of 60 V. With a minimum DC current gain (hFE) of 2000 at 3 A and 3 V, it offers significant amplification for driving loads. The transistor is rated for a maximum power dissipation of 2 W and operates at junction temperatures up to 150°C. The KSB1022TU is supplied in a TO-220F-3 package, suitable for through-hole mounting. It finds application in power control circuits, voltage regulators, and general-purpose amplification across various industrial sectors. The collector cutoff current is specified at a maximum of 100 µA (ICBO). saturation voltage (Vce Sat) is 2 V at 14 mA base current and 7 A collector current.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 14mA, 7A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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