KSB1015YTU
TRANS PNP 60V 3A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSB1015YTU is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. It offers a minimum DC current gain (hFE) of 100 at 500mA and 5V. The transition frequency is 9MHz, and it can dissipate up to 25W of power. The KSB1015YTU is packaged in a TO-220F-3 (Full Pack) configuration, suitable for through-hole mounting. Typical applications include power supply circuits, audio amplifiers, and general electronic switching in consumer electronics and industrial control systems. The collector cutoff current (ICBO) is specified at a maximum of 100µA. Saturation voltage (Vce Saturation) at 300mA collector current and 3A collector current is 1V maximum. This device operates at junction temperatures up to 150°C and is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 9MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
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