KSA916YTA
TRANS PNP 120V 0.8A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA916YTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 120V collector-emitter breakdown voltage and can handle a continuous collector current of up to 800mA. With a transition frequency of 120MHz, it is suitable for moderate frequency circuits. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a maximum collector-emitter saturation voltage of 1V at 50mA and 500mA. Power dissipation is rated at 900mW. The KSA916YTA is packaged in a TO-92-3 (TO-226-3) through-hole configuration, supplied in cut tape. Its operating temperature range extends to 150°C (TJ). This transistor finds application in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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