KSA916OBU
TRANS PNP 120V 0.8A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA916OBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 800mA. With a transition frequency of 120MHz and a maximum power dissipation of 900mW, it is suitable for use in consumer electronics, industrial control systems, and communication equipment. The KSA916OBU is housed in a TO-92-3 package, facilitating through-hole mounting. Key performance parameters include a minimum DC current gain (hFE) of 80 at 100mA and 5V, and a Vce saturation of 1V at 50mA and 500mA. The collector cutoff current (ICBO) is a maximum of 100nA. Operating temperature range extends up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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