KSA910YSHTA
TRANS PNP 150V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA910YSHTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 150V and a continuous collector current rating of 50mA. The device exhibits a minimum DC current gain (hFE) of 120 at 10mA collector current and 5V collector-emitter voltage, with a transition frequency of 100MHz. Power dissipation is rated at 800mW. The KSA910YSHTA is supplied in a TO-92-3 package, suitable for through-hole mounting. Applications for this component are found in consumer electronics and industrial control systems. Packaging is provided on tape and box (TB).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |