KSA812GMTF
TRANS PNP 50V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA812GMTF is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It exhibits a transition frequency of 180MHz and a maximum power dissipation of 150mW. The device is housed in a compact SOT-23-3 (TO-236-3, SC-59) package, suitable for automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 1mA and 6V, and a saturation voltage (Vce(sat)) of 300mV at 10mA and 100mA. The collector cutoff current (ICBO) is rated at 100nA. This transistor is typically employed in general-purpose amplification and switching circuits across various industrial and consumer electronics applications. It is supplied in a Tape & Reel (TR) package. The operating junction temperature range extends up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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