KSA812GAMTF
TRANS PNP 50V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA812GAMTF is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 180MHz and a power dissipation of 150mW. The device is housed in a SOT-23-3 surface-mount package, supplied on tape and reel. Key specifications include a minimum DC current gain (hFE) of 200 at 1mA and 6V, and a Vce(sat) of 300mV at 10mA collector current. The maximum collector cutoff current (ICBO) is 100nA. The operating junction temperature range extends to 150°C. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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