KSA733YIUTA
TRANS PNP 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA733YIUTA is a PNP bipolar junction transistor (BJT) featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. This device offers a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V collector-emitter voltage, with a transition frequency of 180MHz. The KSA733YIUTA is designed for through-hole mounting in a TO-92-3 package. It has a maximum power dissipation of 250mW and an operating junction temperature of up to 150°C. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This component is suitable for various applications including general-purpose amplification and switching circuits across industrial and consumer electronics sectors. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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